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New methodology based on atom probe tomography for FinFET dopant

Imec presents a new methodology to probe the 3D-dopant distribution inside FinFET devices and extract important parameters like gate overlap and profile steepness. The method, which is based on atom probe tomography (APT), has proven successful in linking dopant distributions with device performance. The tool is useful for optimizing 3D-doping profiles in next-generation ...


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